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MUR110 ATP216 02001 5714D 571007P 2E335J PD090 02100
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  0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SC1621 features high speed : t stg =20ns max. absolute maximum ratings ta = 25 parameter symbol rating unit collector to base voltage v cbo 40 v collector to emitter voltage v ceo 20 v emitter to base voltage v ebo 5v collector current (dc) i c 200 ma total power dissipation p t 200 mw junction temperature t j 150 storage temperature range t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =30v,i e =0 100 na emitter cutoff current i ebo v eb =4v,i c =0 100 na dc current gain * h fe v ce =0.5v,i c = 1ma 40 80 180 collector-emitter saturation voltage * v ce(sat) i c =10ma,i b = 1ma 0.13 0.25 v base-emitter saturation voltage * v be(sat) i c =10ma,i b = 1ma 0.74 0.85 v gain bandwidth product f t v ce =10v,i e = -10ma 200 500 mhz output capacitance c ob v cb =10v,i e = 0 , f = 1.0mhz 3.0 6.0 pf turn-on time t on 12 20 ns storage time t stg see test circuit 7 20 ns turn-off time t off 18 40 ns *. pw 350s,duty cycle 2% product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
h fe classification markingb2b3b4 h fe 40 80 60 120 90 180 2SC1621 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123


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